Measurement of temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

Researcher of LNSM from Laboratory of diamond and carbon nanostructures in cooperation with Electrotechnical Institute of Slovak Academy of Sciences in Bratislava (group of Dr. G. Vanko) published in Materials & Design journal a complex procedure for evaluation of thermally induced stresses in patterned diamond microstructures grown on the AlGaN/GaN heterostructures. The thermally induced stress in diamond-coated AlGaN/GaN high electron mobility transistors operating at higher temperatures plays an important role in influencing their electronic properties. Therefore, the stress investigation of such heterostructures is a relevant topic. Present study improved the knowledge about analysis and more precise evaluation of thermally-induced stresses by Raman spectroscopy.