System of molecular beam epitaxy and metal-organic epitaxy (MBE/MOVPE)

Molecular beam epitaxy system is designed in particular for growing thin films of monocrystalline semiconductors of III-V type. Besides classical GaAs and AlGaAs based (hetero)structures it is capable of growing high-quality films of ferromagnetic semiconductor (Ga,Mn)As and other materials for spintronic research. The laboratory comprises also system for thin-film growth by metal-organic vapour phase epitaxy.