Molecular beam epitaxy system is designed for growing thin-film semiconductors of III-V type. Besides classical GaAs and AlGaAs based structures it is capable of growing films of ferromagnetic semiconductor (Ga,Mn)As and other materials for spintronics. The lab comprises also system for thin-film growth by metal-organic vapour phase epitaxy.
Uses chemical vapour deposition to prepare thin films of nanocrystalline diamond and/or silicon for use in nanoelectronics and bioelectronics applications.
Core facilities include two unique microwave deposition systems used for growth of diamond thin films and carbon nano-forms (CNTs, graphene).
The system is used to define lateral micro- and nanostructures by optical and electron beam lithography. The electron beam lithography has resolution in the order of nanometers; in combination with reactive ion etching this allows for preparing test samples and chips with details on the scale of tens of nanometers.
Includes a set of five scanning probe microscopes combined with other techniques (microspectroscopy, electrochemistry) for correlation of micromorphology and physical properties (composition, adhesion, luminescence, local electronic properties) with resolution down to several nanometers.
Includes in situ TEM Jeol 1200FX with acceleration voltage 120 kV for dynamic experiments (double tilt straining holder, single tilt heating-straining holder) and state-of-the-art analytical ?field emission? TEM with accelerating voltage 200kV FEI Tecnai F20 X-Twin equipped with STEM-HAADF, EDS, Lorentz microscopy, energy filter GIF.
Includes dual beam SEM-FIB FEI Quanta 3D FEG for 3D characterization and micromachining equipped with analytical detectors EBSD and EDS, GISes (Pt, W, SiO2, enhanced etch), nanomanipulator, and a routine SEM FEI Pheanom with simple control via the touch screen for training and educational purposes.